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HUFA76407DK8, HUFA76407DK8T, HUFA76407DK8T_NL

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Info of HUFA76407DK8
Info of HUFA76407DK8T
Info of HUFA76407DK8T_NL

HUFA76407DK8, HUFA76407DK8T, HUFA76407DK8T_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

HUFA76407DK8, HUFA76407DK8T, HUFA76407DK8T_NL Datasheet download

Five Points

Part Number: HUFA76407DK8T

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH DUAL 60V 3.5A 8-SOIC

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HUFA76407DK8 Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS60 V
Drain to Gate Voltage (R_GS= 20k) (Note 1) .................... V_DGR 60 V
Gate to Source Voltage ............................... V_GS±20 V
Drain Current
Continuous(T_C= 25, V_GS= 5V)(Figure 2)   .......................I_D3.5 A
Continuous (T_A = 25, V_GS = 10V) (Figure 2) (Note 2)................. I_D3.8 A
Continuous (T_C= 100, V_GS= 5V) (Figure 3)   ......................I_D1.0A
Continuous (T_A = 100, V_GS = 4.5V) (Figure 2) (Note 3) ................ I_D1.0A
Pulsed Drain Current................................I_DM Figure 4
Pulsed Avalanche Rating...........................ULS Figure6,17,18
Power Dissipation   ...................................P_D2.5W
Derate Above 25   ..................................20 W/
Operating and Storage Temperature...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334 ......................T_pkg 260
NOTE:
1. T_J = 25 to 125
2. 50/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 1 second.
3. 228/W measured using FR-4 board with 0.006 in² (3.87 mm²) copper pad at 1000 seconds.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.

HUFA76407DK8 Features

• Ultra Low On-Resistance
- r_DS(ON) = 0.090, V_GS = 10V
- r_DS(ON) = 0.105, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- SPICE and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs R_GS Curves

HUFA76407DK8T Parameters

Technical/Catalog Information	HUFA76407DK8T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11.2nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76407DK8T HUFA76407DK8T

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