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HUFA75852G3, HUFA76407D3, HUFA76407D3S

Table of contents:
Info of HUFA75852G3
Info of HUFA76407D3
Info of HUFA76407D3S

HUFA75852G3, HUFA76407D3, HUFA76407D3S Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

HUFA75852G3, HUFA76407D3, HUFA76407D3S Datasheet download

Five Points

Part Number: HUFA75852G3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CHAN 60V 12A TO-252AA

Price Break

1
10
100
250
500
1000

Unit Price

7.65000
6.12000
5.16380
4.97252
4.85776
4.78125

Extended Price

7.65
61.20
516.38
1243.13
2428.88
4781.25

(All prices are in USD) Prices for reference only

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HUFA75852G3 Parameters

Technical/Catalog Information	HUFA75852G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	16 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	7690pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	480nC @ 20V
Package / Case	TO-247
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75852G3 HUFA75852G3

HUFA75852G3 Maximum Ratings

	SYMBOL	HUFA76639P3, HUFA76639S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	150	V
Drain to Gate Voltage (R_GS = 20k) (Note 1)	V_DGR	150	V
Gate to Source Voltage	V_GS	±20	V
Drain Current Continuous (T_C = 25, V_GS= 10V) (Figure 2) Continuous (T_C = 100, V_GS = 4.5V) (Figure 2) .	I_D I_D	75 75	A A
Pulsed Drain Current	I_DM	Figure 4
Pulsed Avalanche Rating	U_IS	Figures 6, 14,15
Power Dissipation	P_D	500	W
Derate Above 25		3.33	W/
Operating and Storage Temperature	T_J, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	T_L	300
Package Body for 10s, See Techbrief TB334	T_pkg	260

NOTES:
1. T_J = 25 to150 .
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

HUFA75852G3 Features

• Ultra Low On-Resistance
   - r_DS(ON) = 0.016, V_GS = 10V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

HUFA76407D3 Parameters

Technical/Catalog Information	HUFA76407D3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	92 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.3nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76407D3 HUFA76407D3

HUFA76407D3 Maximum Ratings

	SYMBOL	HUFA76639P3, HUFA76639S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	60	V
Drain to Gate Voltage (R_GS = 20k) (Note 1)	V_DGR	60	V
Gate to Source Voltage	V_GS	±16	V
Drain Current Continuous (T_C= 25, V_GS = 5V) Continuous (T_C = 25, V_GS= 10V) (Figure 2) Continuous (T_C = 100, V_GS = 5V) Continuous (T_C = 100, V_GS = 4.5V) (Figure 2) .	I_D I_D I_D I_D	11 12 6 6	A A A A
Pulsed Drain Current	I_DM	Figure 4
Pulsed Avalanche Rating	U_IS	Figures 6, 14,15
Power Dissipation	P_D	38	W
Derate Above 25		0.25	W/
Operating and Storage Temperature	T_J, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	T_L	300
Package Body for 10s, See Techbrief TB334	T_pkg	260

HUFA76407D3 Features

• Ultra Low On-Resistance
   - r_DS(ON)= 0.092,V_GS=10V
   - r_DS(ON)= 0.107,V_GS=5V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves

HUFA76407D3S Parameters

Technical/Catalog Information	HUFA76407D3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	92 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.3nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76407D3S HUFA76407D3S

HUFA76407D3S Maximum Ratings

	SYMBOL	HUFA76639P3, HUFA76639S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	60	V
Drain to Gate Voltage (R_GS = 20k) (Note 1)	V_DGR	60	V
Gate to Source Voltage	V_GS	±16	V
Drain Current Continuous (T_C= 25, V_GS = 5V) Continuous (T_C = 25, V_GS= 10V) (Figure 2) Continuous (T_C = 100, V_GS = 5V) Continuous (T_C = 100, V_GS = 4.5V) (Figure 2) .	I_D I_D I_D I_D	11 12 6 6	A A A A
Pulsed Drain Current	I_DM	Figure 4
Pulsed Avalanche Rating	U_IS	Figures 6, 14,15
Power Dissipation	P_D	38	W
Derate Above 25		0.25	W/
Operating and Storage Temperature	T_J, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	T_L	300
Package Body for 10s, See Techbrief TB334	T_pkg	260

HUFA76407D3S Features

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