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HUFA75823D3S, HUFA75842P3, HUFA75842S3S

Table of contents:
Info of HUFA75823D3S
Info of HUFA75842P3
Info of HUFA75842S3S

HUFA75823D3S, HUFA75842P3, HUFA75842S3S Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

HUFA75823D3S, HUFA75842P3, HUFA75842S3S Datasheet download

Five Points

Part Number: HUFA75842P3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CHAN 150V 43A TO-263AB

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HUFA75823D3S Parameters

Technical/Catalog Information	HUFA75823D3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	150 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	800pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 20V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75823D3S HUFA75823D3S

HUFA75823D3S Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS150 V
Drain to Gate Voltage (R_GS= 20k) (Note 1) .................... V_DGR 150 V
Gate to Source Voltage   ............................... V_GS±20 V
Drain Current
Continuous(T_C= 25, V_GS= 10V)(Figure 2) ........................I_D14 A
Continuous (T_C= 100, V_GS= 10V) (Figure 2) ......................I_D10 A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating   ...........................ULS Figure6,14,15
Power Dissipation .....................................P_D85W
Derate Above 25   ..................................0.57 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334 ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.

HUFA75823D3S Features

• Ultra Low On-Resistance
- r_DS(ON) = 0.150, V_GS= 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

HUFA75842P3 Parameters

Technical/Catalog Information	HUFA75842P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	43A
Rds On (Max) @ Id, Vgs	42 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	2730pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	175nC @ 20V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75842P3 HUFA75842P3

HUFA75842P3 Maximum Ratings

                                                                                            HUFA75842P3   UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . V_DSS               150           V
Drain to Gate Voltage (R_GS = 20k) (Note 1) .. . .   V_DGR               150            V
Gate to Source Voltage . . . . . . . . . . . . . . . . .. . . . . V_GS               ±20           V
Drain Current
Continuous (T_C = 25, V_GS = 10V) (Figure 2) . . . . . . I_D                43             A
Continuous (T_C = 100, V_GS = 10V) (Figure 2) . . . . . I_D              30             A
Pulsed Drain Current . . . . . . . . . . . . . .. . . . . . . . . . . I_DM             Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . U_IS    Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . .   . . . . . . P_D               230           W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53         W/
Operating and Storage Temperature . . . . . . . . . T_J, T_STG          -55 to 175
Maximum Temperature for Solderin
Leads at 0.063in (1.6mm) from Case for 10s. . . . . .. . T_L                 300
Package Body for 10s, See Techbrief TB334. . . . . . . T_pkg                  260

NOTES:
1. T_J= 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

HUFA75842P3 Features

• Ultra Low On-Resistance
   - r_DS(ON) = 0.042, V_GS = 10V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

HUFA75842S3S Parameters

Technical/Catalog Information	HUFA75842S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	43A
Rds On (Max) @ Id, Vgs	42 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	2730pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	175nC @ 20V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75842S3S HUFA75842S3S

HUFA75842S3S Maximum Ratings

HUFA75842S3S Features

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