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Drain to Source Voltage (Note 1) .......................... VDSS 100 V Drain to Gate Voltage (RGS = 20k) (Note 1).................... VDGR 100 V Gate to Source Voltage ............................... VGS ±20 V Drain Current Continuous (TA = 25, VGS = 10V)(Figure 2) ......................ID44 A Continuous (TA = 100, VGS = 10V) (Figure 2) ......................ID31A Pulsed Drain Current ................................IDM Figure 4 Pulsed Avalanche Rating ...........................ULS Figure6,14,15 Power Dissipation ...................................PD155W Derate Above 25 ..................................1.03 W/ Operating and Storage Temperature ...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .....................TL 300 Package Body for 10s, See Techbrief 334 ........ ..............Tpkg 260 NOTE: 1. TJ = 25 to 150 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA75637P3 Features
• Ultra Low On-Resistance - rDS(ON) = 0.030, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve
HUFA75637S3S Parameters
Technical/Catalog Information
HUFA75637S3S
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
44A
Rds On (Max) @ Id, Vgs
30 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds
1700pF @ 25V
Power - Max
155W
Packaging
Tube
Gate Charge (Qg) @ Vgs
108nC @ 20V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75637S3S HUFA75637S3S
HUFA75637S3S Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 100 V Drain to Gate Voltage (RGS = 20k) (Note 1).................... VDGR 100 V Gate to Source Voltage ............................... VGS ±20 V Drain Current Continuous (TA = 25, VGS = 10V)(Figure 2) ......................ID44 A Continuous (TA = 100, VGS = 10V) (Figure 2) ......................ID31A Pulsed Drain Current ................................IDM Figure 4 Pulsed Avalanche Rating ...........................ULS Figure6,14,15 Power Dissipation ...................................PD155W Derate Above 25 ..................................1.03 W/ Operating and Storage Temperature ...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .....................TL 300 Package Body for 10s, See Techbrief 334 ........ ..............Tpkg 260 NOTE: 1. TJ = 25 to 150 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA75637S3S Features
• Ultra Low On-Resistance - rDS(ON) = 0.030, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve