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Drain to Source Voltage (Note 1) .......................... VDSS 80 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 80 V Gate to Source Voltage ............................... VGS ±20 V Drain Current Continuous (TC = 25, VGS = 10V) (Figure 2) .......................ID6 A Continuous (TC = 100, VGS = 10V) (Figure 2) ......................ID 4 A Pulsed Drain Current ................................IDM Figure 4 Pulsed Avalanche Rating ...........................ULS Figure6,14,15 Power Dissipation ....................................PD2.5W Derate Above 25 ...................................20 W/ Operating and Storage Temperature ...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s ......................TL 300 Package Body for 10s, See Techbrief 370.......................Tpkg 260 NOTE: 1. TJ = 25 to 125 2. 50/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second. 3. 152/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds 4. 189/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA75531SK8 Features
• Ultra Low On-Resistance - rDS(ON) = 0.030, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve
HUFA75542S3S Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 80 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 80 V Gate to Source Voltage ............................... VGS ±20 V Drain Current Continuous (TC = 25, VGS = 10V) (Figure 2) ......................ID75 A Continuous (TC = 100, VGS = 10V) (Figure 2) ....................IDM 58 A Pulsed Drain Current ............................IDM Figure 4 6,14,15 Pulsed Avalanche Rating ...........................ULS Figure6,14,15 Power Dissipation ...................................PD6230W Derate Above 25 ..................................1.54 W/ Operating and Storage Temperature ...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s ......................TL 300 Package Body for 10s, See Techbrief 334 .......................Tpkg 260 NOTE: 1. TJ = 25 to 150 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA75542S3S Features
• Ultra Low On-Resistance - rDS(ON) = 0.014, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve
HUFA75545P3 Parameters
Technical/Catalog Information
HUFA75545P3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
10 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
3750pF @ 25V
Power - Max
270W
Packaging
Tube
Gate Charge (Qg) @ Vgs
235nC @ 20V
Package / Case
TO-220AB
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75545P3 HUFA75545P3
HUFA75545P3 Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . .. . . . . . . . . . . VDSS 80 V Drain to Gate Voltage (RGS= 20k) (Note 1) . . . . . . . . . . . . . . . . . . . .VDGR 80 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TC= 25oC, VGS= 10V) (Figure 2) .. . . . . . . . . . . . . . . . . . . . . . ID 75A Continuous (TC= 100oC, VGS= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . ID7 3A Pulsed Drain Current . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . .ID MFigure 4 Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figure 6 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 270W Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 1.8W/ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL 300 Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . Tpkg 260 NOTES: 1. TJ= 25 to 150. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA75545P3 Features
• Ultra Low On-Resistance - rDS(ON)= 0.010,VGS=10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchild.com • Peak Current vs Pulse Width Curve • UIS Rating Curve