HUFA7534P3, HUFA75429D3S, HUFA75445S3S Selling Leads, Datasheet
MFG:FAIR Package Cooled:15320+ D/C:17800
HUFA7534P3, HUFA75429D3S, HUFA75445S3S Datasheet download
Part Number: HUFA7534P3
MFG: FAIR
Package Cooled: 15320+
D/C: 17800
MFG:FAIR Package Cooled:15320+ D/C:17800
HUFA7534P3, HUFA75429D3S, HUFA75445S3S Datasheet download
MFG: FAIR
Package Cooled: 15320+
D/C: 17800
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PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUFA75429D3S
File Size: 297734 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on- esistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches.
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain to Source Voltage |
60 |
V |
VGS |
Gate to Source Voltage |
±20 |
V |
ID
|
Drain Current Continuous (TC = 25, VGS = 10V) |
20 |
A |
Continuous (TC = 125, VGS = 10V, RJA = 43/W) |
4 |
A | |
Single Pulse Avalanche Energy (Note 1) |
Figure 4 |
A | |
EAS |
Pulsed |
312 |
mJ |
PD
|
Power dissipation |
125 |
W |
Derate above 25 |
0.83 |
W/ | |
TJ, TSTG |
Operating and Storage Temperature |
-55 to 175 |