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These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75339
HUFA75339S3S Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 55 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 55 V Gate to Source Voltage............................... VGS ±20 V Drain Current Continuous (Figure 2) .................................ID 75 A Pulsed Drain Current ...............................IDM Figure 4 Pulsed Avalanche Rating ..........................EAS Figure6, 14, 15 Power Dissipation ...................................PD200W Derate Above 25 .................................1.35 W/ Operating and Storage Temperature ..................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .....................TL 300 Package Body for 10s, See Techbrief 334 ......................Tpkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 to 150 .
HUFA75339S3S Features
• 75A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HUFA75343P3 Parameters
Technical/Catalog Information
HUFA75343P3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
9 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
3000pF @ 25V
Power - Max
270W
Packaging
Tube
Gate Charge (Qg) @ Vgs
205nC @ 20V
Package / Case
TO-220AB
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75343P3 HUFA75343P3
HUFA75343P3 General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products.
Formerly developmental type TA75343.
HUFA75343P3 Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 55 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 55 V Gate to Source Voltage............................... VGS ±20 V Drain Current Continuous (Figure 2) .................................ID 75 A Pulsed Drain Current ...............................IDM Figure 4 Pulsed Avalanche Rating ..............................EAS Figure6 Power Dissipation ...................................PD270W Derate Above 25..................................1.81 W/ Operating and Storage Temperature...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .....................TL 300 Package Body for 10s, See Techbrief 334 ......................Tpkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 to 150 .
HUFA75343P3 Features
• 75A, 55V • Simulation Models - Temperature Compensating PSPICE® and SABER™ Models - Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HUFA75343S3S Parameters
Technical/Catalog Information
HUFA75343S3S
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
9 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
3000pF @ 25V
Power - Max
270W
Packaging
Tube
Gate Charge (Qg) @ Vgs
205nC @ 20V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA75343S3S HUFA75343S3S
HUFA75343S3S General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products.
Formerly developmental type TA75343.
HUFA75343S3S Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 55 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 55 V Gate to Source Voltage............................... VGS ±20 V Drain Current Continuous (Figure 2) .................................ID 75 A Pulsed Drain Current ...............................IDM Figure 4 Pulsed Avalanche Rating ..............................EAS Figure6 Power Dissipation ...................................PD270W Derate Above 25..................................1.81 W/ Operating and Storage Temperature...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s .....................TL 300 Package Body for 10s, See Techbrief 334 ......................Tpkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 to 150 .
HUFA75343S3S Features
• 75A, 55V • Simulation Models - Temperature Compensating PSPICE® and SABER™ Models - Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"