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HUF75631S3S, HUF75631S3ST, HUF75631SK8

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Info of HUF75631S3S
Info of HUF75631S3ST
Info of HUF75631SK8

HUF75631S3S, HUF75631S3ST, HUF75631SK8 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

HUF75631S3S, HUF75631S3ST, HUF75631SK8 Picture

HUF75631S3S, HUF75631S3ST, HUF75631SK8 Datasheet download

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Part Number: HUF75631S3S

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 100V 33A TO-263AB

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HUF75631S3S Parameters

Technical/Catalog Information	HUF75631S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	40 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	1220pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	79nC @ 20V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75631S3S HUF75631S3S

HUF75631S3S Maximum Ratings

Drain to Source Voltage (Note 1)	V_DSS	100	V
Drain to Gate Voltage (RGS = 20k) (Note 1)	V_DGR	100	V
Gate to Source Voltage	V_GS	±20	V
Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2)	I_D	33	A
Continuous (TC= 100oC, VGS = 10V) (Figure 2)	I_D	23	A
Pulsed Drain Current	I_DM	Figure 4
Pulsed Avalanche Rating	U_IS	Figures 6, 14, 15
Power Dissipation	P_D	120	W
Derate Above 25oC		0.80	W/oC
Operating and Storage Temperature	T_J, T_STG	-55 to 175	oC
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	T_L	300	oC
Package Body for 10s, See Techbrief TB334	T_pkg	260	oC

HUF75631S3S Features

• Ultra Low On-Resistance
- rDS(ON) = 0.040, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

HUF75631S3ST Parameters

Technical/Catalog Information	HUF75631S3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	40 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	1220pF @ 25V
Power - Max	120W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	79nC @ 20V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75631S3ST HUF75631S3ST

HUF75631S3ST Maximum Ratings

			HUF75631P3	UNITS
Drain to Source Voltage (Note 1)		V_DSS	100	V
Drain to Gate Voltage (RGS = 20k) (Note 1)		V_DGR	100	V
Gate to Source Voltage		V_GS	±20	V
Drain Current Continuous (TC= 25, VGS = 10V)(Figure 2).		I_D	33	A
Drain Current Continuous (TC= 100, VGS = 10V)(Figure 2).		I_D	23	A
Drain Current Pulsed Drain Current		I_DM	Figure 4
Pulsed Avalanche Rating		E_AS	Figures 6,14,15
Power Dissipation		P_D	120	W
Derate Above 25			0.80	W/
Operating and Storage Temperature		T_J,T_STG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	T_L	300
Maximum Temperature for Soldering	Package Body for 10s, See Techbrief 334	T_pkg	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25 to 150.

HUF75631S3ST Features

• Ultra Low On-Resistance
- r_DS(ON) = 0.040, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

HUF75631SK8 Maximum Ratings

				UNITS
Drain to Source Voltage (Note 1)		V_DSS	100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)		V_DGR	100	V
Gate to Source Voltage		V_GS	±20	V
Drain Current Continuous(TC= 25, VGS = 10V) (Figure 2).		I_D	5.5	A
Drain Current Continuous(TC= 100, VGS = 10V) (Figure 2).		I_D	3.5	A
Drain Current Pulsed Drain Current		I_DM	Figure 4
Pulsed Avalanche Rating		E_AS	Figures 6, 14, 15
Power Dissipation		P_D	2.5	W
Derate Above 25oC			20	W/
Operating and Storage Temperature		T_J,T_STG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	T_L	300
Maximum Temperature for Soldering	Package Body for 10s, See Techbrief 334	T_pkg	260

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

HUF75631SK8 Features

• Ultra Low On-Resistance
- r_DS(ON) = 0.039, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^© Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

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