MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PN D/C:2010+
HUF75344A3, HUF75344G3_NL, HUF75344P3_NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-3PN
D/C: 2010+
Description: MOSFET N-CH ULTRAFET 55V TO-3PN
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PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | HUF75344A3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 4855pF @ 25V |
| Power - Max | 288.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 208nC @ 20V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75344A3 HUF75344A3 |
This N-channel power MOSFET is produced using Fairchild Semiconductor's innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
| Symbol | Parameter | Ratings | Units | |
| VDSS VGSS |
Drain to Source Voltage Gate to Source Voltage |
55 ±20 |
V V | |
| ID IDM |
Drain Current Drain Current |
-Continuous (TC = 130) - Pulsed |
75 300 |
A A |
| EAS | Single Pulsed Avalanche Energy (Note 1) | 1153 | mJ | |
| PD | Power Dissipation | (TC = 25) - Derate above 25 |
288.5 1.92 |
W W/ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | ||
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 | ||
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