MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
HUF75321P3_NL, HUF75321S3S, HUF75321S3S-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CHAN 55V 35A TO-263AB
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PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75321S3S
File Size: 133577 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | HUF75321S3S |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 25V |
| Power - Max | 93W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 44nC @ 20V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75321S3S HUF75321S3S |
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
|
UNITS | ||||
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V | |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
55 |
V | |
| Gate to Source Voltage |
VGS |
±20 |
V | |
| Drain Current Continuous (Figure 2). |
ID |
35 |
A | |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
| Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
||
| Power Dissipation |
PD |
93 |
W | |
| Derate Above 25oC |
0.625 |
W/ | ||
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
| Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
||
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