HP4395, HP4410DY, HP4410DYT Selling Leads, Datasheet
MFG:HEWLETT Package Cooled:06+ D/C:05+
HP4395, HP4410DY, HP4410DYT Datasheet download
Part Number: HP4395
MFG: HEWLETT
Package Cooled: 06+
D/C: 05+
MFG:HEWLETT Package Cooled:06+ D/C:05+
HP4395, HP4410DY, HP4410DYT Datasheet download
MFG: HEWLETT
Package Cooled: 06+
D/C: 05+
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PDF/DataSheet Download
Datasheet: HP4410
File Size: 154964 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HP4410DY
File Size: 84326 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HP4410
File Size: 154964 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
HP4410DY |
UNITS | |||
Drain to Source Voltage (Note 1) |
VDSS |
30 |
V | |
Drain to Gate Voltage (R GS = 20k ) (Note 1) |
VDGR |
30 |
V | |
Gate to Source Voltage |
VGS |
±16 |
V | |
Drain Current | Continuous |
ID |
10 |
A |
Pulsed Drain Current (10s Pulse Width) |
IDM |
50 |
A | |
Power Dissipation |
PD |
2.5 |
W | |
Derate Above 25 |
0 02 |
W/ | ||
Operating and Storage Temperature |
TJ ,TSTG |
-55 to 150 |
||
Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s.TL |
300 |
||
Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |