HP4410DY

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0135 Ohms


Features:

• Logic Level Gate Drive
• 10A, 30V
• r_DS(ON) = 0.0135 at ID = 10A, V_GS = 10V
• r_DS(ON) = 0.020 at ID = 8A, V_GS = 4.5V
• Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			HP4410DY	UNITS
Drain to Source Voltage (Note 1)		VDSS	30	V
Drain to Gate Voltage (R GS = 20k ) (Note 1)		VDGR	30	V
Gate to Source Voltage		VGS	±16	V
Drain Current	Continuous	ID	10	A
	Pulsed Drain Current (10s Pulse Width)	IDM	50	A
Power Dissipation		PD	2.5	W
Derate Above 25			0 02	W/
Operating and Storage Temperature		TJ ,TSTG	-55 to 150
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.TL		300
	Package Body for 10s, See Techbrief 334	Tpkg	260

 

Description

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device HP4410DY is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HP4410DY was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.