HP4936DY

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 0.037 Ohms


Features:

• Logic Level Gate Drive
• 5.8A, 30V
• r_DS(ON) = 0.037W at I_D = 5.8A, V_GS = 10V
• r_DS(ON) = 0.055W at I_D = 4.7A, V_GS = 4.5V
• Related Literature
    - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			HP4936DY	UNITS
Drain to Source Voltage (Note 1)		VDSS	30	V
Drain to Gate Voltage (R GS = 20k ) (Note 1)		VDGR	30	V
Gate to Source Voltage		VGS	±16	V
Drain Current	Continuous	ID	5.8	A
	Pulsed Drain Current (10s Pulse Width)	IDM	30	A
Power Dissipation		PD	2	W
Derate Above 25			0.02	W/
Operating and Storage Temperature		TJ ,TSTG	-55 to 150
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.TL		300
	Package Body for 10s, See Techbrief 334	Tpkg	260

 

Description

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device HP4936DY is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HP4936DY was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.