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Q1 (Transistor) Collector-base voltage VCBO ...............50 V Collector-emitter voltage VCEO ............50 V Emitter-base voltage VEBO ..................10 V Collector current IC ..........................100 mA Q2 (MOSFET) Drain-source voltage VDS .....................20 V Gate-source voltage VGSS ................± 20 V DC drain current DC ID ......................100mA DC drain current Pulse IDP .................200mA Q1, Q2 Common Power dissipation PC (Note 1) ..........100 mW Junction temperature Tj ........................150 Storage temperature range Tstg.. −55~150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating.