HN58C1001RFP15, HN58C1001T-15, HN58C256 Selling Leads, Datasheet
MFG:HD Package Cooled:1162 D/C:01+
HN58C1001RFP15, HN58C1001T-15, HN58C256 Datasheet download
Part Number: HN58C1001RFP15
MFG: HD
Package Cooled: 1162
D/C: 01+
HN58C1001RFP15, HN58C1001T-15, HN58C256
- Table of contents:
Info of HN58C1001RFP15
Info of HN58C1001T-15
Info of HN58C256
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About HN5400
PDF/DataSheet Download
Datasheet: HN5400
File Size: 127756 KB
Manufacturer: SEMTECH [Semtech Corporation]
Download : Click here to Download
About HN58C1001T-15
PDF/DataSheet Download
Datasheet: HN58C1001T-15
File Size: 120185 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HN58C256 Series
PDF/DataSheet Download
Datasheet: HN58C256 Series
File Size: 104408 KB
Manufacturer: hitachi
Download : Click here to Download
HN58C256 General Description
The Hitachi HN58C256 is a electrically erasable and programmable ROM organized as 32768-word ×8- bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page
programming function to make its erase and write operations faster.
HN58C256 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Supply voltage*1 |
VCC |
0.6 to +7.0 |
V |
| Input voltage*1 |
Vin |
0.5*2 to +7.0 |
V |
| Operating temperature range*3 |
Topr |
0 to +70 |
°C |
| Storage temperature range |
Tstg |
55 to +125 |
°C |
1. With respect to VSS
2. Vin min = 3.0 V for pulse width 50 ns
3. Including electrical characteristics and data retention.
HN58C256 Features
• Single 5 V supply
• On-chip latches: address, data, CE , OE , WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Fast access time: 200 ns max
• Low power dissipation: 20 mW/MHz typ (active)
1.1 mW max (standby)
• Data polling
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 year data retention
• On-chip latches: address, data, CE , OE , WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Fast access time: 200 ns max
• Low power dissipation: 20 mW/MHz typ (active)
1.1 mW max (standby)
• Data polling
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 year data retention
HN58C256 Connection Diagram
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