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The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word ´ 8- bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.
HN58C1001 Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
0.6 to +7.0
V
Input voltage relative to VSS
Vin
0.5*1 to +7.0*3
V
Operating temperature range*2
Topr
0 to +70
Storage temperature range
Tstg
55 to +125
HN58C1001 Features
` Single supply: 5.0 V ± 10% ` Access time: 150 ns (max) ` Power dissipation - Active: 20 mW/MHz, (typ) - Standby: 110 W (max) ` On-chip latches: address, data, CE, OE, WE ` Automatic byte write: 10 ms (max) ` Automatic page write (128 bytes): 10 ms (max) ` Data polling and RDY/Busy ` Data protection circuit on power on/off ` Conforms to JEDEC byte-wide standard ` Reliable CMOS with MNOS cell technology ` 104 erase/write cycles (in page mode) ` 10 years data retention ` Software data protection ` Write protection by RES pin