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HN2S03T, HN2S05FU, HN2V02H-B

Table of contents:
Info of HN2S03T
Info of HN2S05FU
Info of HN2V02H-B

HN2S03T, HN2S05FU, HN2V02H-B Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOT-743 D/C:07NOPB

HN2S03T, HN2S05FU, HN2V02H-B Datasheet download

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Part Number: HN2S03T

MFG: TOSHIBA

Package Cooled: SOT-743

D/C: 07NOPB

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HN2S03T Maximum Ratings

Parameter	Symbol	Limits	Unit
Maximum (peak) reverse Voltage	V_RM	25	V
Reverse voltage	V_R	20	V
Maximum (peak) forward current	I_FM	100 *	mA
Average forward current	I_o	50 *	mA
Surge current (10ms)	I_FSM	1 *	mA
Power dissipation	P	70 **	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	-55 to +150
Operating temperature range	T_opr	−40∼100

HN2S03T Typical Application

Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities.
Low forward voltage : VF (3) = 0.50V (typ.)
Low reverse current : IR= 0.5A (max)
Small total capacitance : CT = 3.9pF (typ.)

HN2S05FU Maximum Ratings

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse voltage	V_RM	15	V
Reverse voltage	V_R	10	V
Maximum (peak) forward current	I_FSM	200 *	mA
Average forward current	I_O	100 *	mA
Surge current (10ms)	I_FSM	1 *	A
Power dissipation	P	100 *	mW
Junction Temperature	T_j	125
Storage Temperature Range	T_stg	−55∼125
Operating temperature range	T_opr	−40∼110

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3). Where two or three diodes are used, the absolute maximum rating per diode is 75% that for a single iode.
** :Total rating

HN2S05FU Typical Application

The HN2S05FU is composed of three (3) independent diodes.
Excellent forward current and forward voltage characteristics:
V_F = 0.23 V (typ.) @ I_F = 5 mA

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