HN2E01F-B, HN2S01F, HN2S01FU Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOT-163 D/C:05+
HN2E01F-B, HN2S01F, HN2S01FU Datasheet download
Part Number: HN2E01F-B
MFG: TOSHIBA
Package Cooled: SOT-163
D/C: 05+
HN2E01F-B, HN2S01F, HN2S01FU
- Table of contents:
Info of HN2E01F-B
Info of HN2S01F
Info of HN2S01FU
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About HN27512
PDF/DataSheet Download
Datasheet: HN27512
File Size: 309819 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HN2S01F
PDF/DataSheet Download
Datasheet: HN2S01F
File Size: 123033 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About HN2S01FU
PDF/DataSheet Download
Datasheet: HN2S01FU
File Size: 122017 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
HN2S01F General Description
Low Voltage High Speed Switching Application
HN2S01F Maximum Ratings
| Characteristic |
Symbol |
Rating |
Unit |
| Maximum (peak) reverse Voltage |
VRM |
15 |
V |
| Reverse voltage |
VR |
10 |
V |
| Maximum (peak) forward current |
IFM |
200 * |
mA |
| Average forward current |
IO |
100 * |
mA |
| Surge current (10ms) |
IFSM |
1 * |
A |
| Power dissipation |
P |
300 |
mW |
| Junction temperature |
Tj |
125 |
|
| Storage temperature range |
Tstg |
-55~125 |
|
| Operating temperature range |
Topr |
-40~100 |
|
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook "Handling Precautions"/"Derating Concept
and Methods") and individual reliability data (i.e. reliability treport and estimated failure
rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 of the single diode one.
HN2S01F Features
`HN2S01F is composed of 3 independent diodes.
`Low reverse current: VF = 0.23V (typ.) @I F = 5mA
`Low reverse current: VF = 0.23V (typ.) @I F = 5mA
HN2S01F Connection Diagram
HN2S01FU Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Maximum (peak) reverse voltage | VRM | 15 | V |
| Reverse voltage | VR | 10 | V |
| Maximum (peak) forward current | IFM | 200* | mA |
| Average forward current | IO | 100* | mA |
| Surge current (10ms) | IFSM | 1* | A |
| Power dissipation | P | 200* | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature range | Tstg | -55~125 | |
| Operating temperature range | Topr | -55~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one.
HN2S01FU Features
·HN2S01FU is composed of 3 independent diodes.
·Low reverse current: VF = 0.23V (typ.) @IF = 5mA
·Low reverse current: VF = 0.23V (typ.) @IF = 5mA
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