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HN29V51211T-50H, HN29V51291BT-30, HN29W001H02V

Table of contents:
Info of HN29V51211T-50H
Info of HN29V51291BT-30
Info of HN29W001H02V

HN29V51211T-50H, HN29V51291BT-30, HN29W001H02V Selling Leads, Datasheet

MFG:RENESAS Package Cooled:QFP D/C:09+

HN29V51211T-50H, HN29V51291BT-30, HN29W001H02V Picture

HN29V51211T-50H, HN29V51291BT-30, HN29W001H02V Datasheet download

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Part Number: HN29V51211T-50H

MFG: RENESAS

Package Cooled: QFP

D/C: 09+

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HN29V51211T-50H General Description

The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211T-50H are more than 32,113 (98% of all sector address) and less than 32,768 sectors.

HN29V51211T-50H Maximum Ratings

Parameter	Symbol	Value	Unit	Notes
V_CC voltage	V_CC	0.6 to +4.6	V	1
V_SS voltage	V_SS	0	V
All input and output voltages	V_in, V_out	0.6 to +4.6	V	1, 2
Operating temperature range	T_opr	0 to +70	°C
Storage temperature range	T_stg	65 to +125	°C	3
Storage temperature under bias	T_bias	10 to +80	°C

Notes: 1. Relative to V_SS.
2. Vin, Vout = 2.0 V for pulse width 20 ns.
3. Device storage temperature range before programming.

HN29V51211T-50H Features

` On-board single power supply (V_CC): V_CC = 2.7 V to 3.6 V
` Organization
-AND Flash Memory: (2048 + 64) bytes * (More than 32,113 sectors)
- Data register: (2048 + 64) bytes
` Multi-level memory cell
- 2 bit/per memory cell
` Automatic programming
- Sector program time: 1.0 ms (typ)
- System bus free
- Address, data latch function
- Internal automatic program verify function
- Status data polling function
` Automatic erase
- Single sector erase time: 1.0 ms (typ)
- System bus free
- Internal automatic erase verify function
- Status data polling function
` Erase mode
- Single sector erase ((2048 + 64) byte unit)
` Fast serial read access time:
- First access time: 50 s (max)
- Serial access time: 50 ns (max)
` Low power dissipation:
- I_CC1 = 2 mA (typ) (Read)
- I_CC2 = 20 mA (max) (Read)
- I_SB2 = 50 A (max) (Standby)
- I_CC3/ICC4 = 40 mA (max) (Erase/Program)
- I_SB3= 20 A (max) (Deep standby)
` The following architecture is required for data reliability.
- Error correction: more than 3-bit error correction per each sector read
- Spare sectors: 1.8% (579 sectors) (min) within usable sectors

HN29V51211T-50H Connection Diagram

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