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HN29V25691BT-30, HN29V2G74W30, HN29V2G74WT-30

Table of contents:
Info of HN29V25691BT-30
Info of HN29V2G74W30
Info of HN29V2G74WT-30

HN29V25691BT-30, HN29V2G74W30, HN29V2G74WT-30 Selling Leads, Datasheet

MFG:Renesas Package Cooled:SLC D/C:07+

HN29V25691BT-30, HN29V2G74W30, HN29V2G74WT-30 Picture

HN29V25691BT-30, HN29V2G74W30, HN29V2G74WT-30 Datasheet download

Five Points

Part Number: HN29V25691BT-30

MFG: Renesas

Package Cooled: SLC

D/C: 07+

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HN29V2G74WT-30 General Description

The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13m process technology and AG-AND (Assist Gate-AND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.

HN29V2G74WT-30 Features

• On-board single power supply: V_CC= 3.0 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization
- Memory array: (2048+64) bytes * 16384 page * 4 Bank * 2
 -Page size: (2048+64) bytes * 2
 -Block size: (2048+64) bytes * 2 page * 2
 -Page Register: (2048+64) bytes * 4 Bank * 2
• Multi level memory cell
- 2bit/cell
• Automatic program
 -Page program
- Multi bank program
 -Cache program
 -2 page cache program
• Automatic Erase
 -Block Erase
 -Multi Bank Block Erase
• Access time
 -Memory array to register (1st access time): 100 s max
 -Serial access: 35 ns min

HN29V2G74WT-30 Connection Diagram

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