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HMC449, HMC449LC3B, HMC451

Table of contents:
Info of HMC449
Info of HMC449LC3B
Info of HMC451

HMC449, HMC449LC3B, HMC451 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:SMD/DIP D/C:07+

HMC449, HMC449LC3B, HMC451 Datasheet download

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Part Number: HMC449

MFG: HITTITE

Package Cooled: SMD/DIP

D/C: 07+

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HMC449 General Description

The HMC449 die is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When drThe HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifi er die which operates between 2 and 20 GHz. The amplifi er provides 15 dB of gain, 2.0 to 2.5 dB noise fi gure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain fl atness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications. The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifi er I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). iven by a 0 dBm signal the multiplier provides +10 dBm typical output power from 28 to 32 GHz. The Fo and 3Fo isolations are >34 dBc and >17 dBc respectively at 30 GHz. The HMC449 is ideal for use in LO multiplier chains yielding a reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. All data is with the chip in a 50 ohm test fi xture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).

HMC449 Maximum Ratings

RF Input (Vcc= +5V)	+20 dBm
Supply Voltage (Vd1)	+6.0 Vdc
Channel Temperature	175 °C
Continuous Pdiss (T= 85 °C) (derate 8.3 mW/°C above 85 °C)	744 mW
Thermal Resistance (junction to die bottom)	121 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

HMC449 Features

Output Power: +10 dBm
Wide Input Power Range: -4 to +6 dBm
Fo Isolation: 34 dBc @ Fout= 30 GHz
100 kHz SSB Phase Noise: -132 dBc/Hz
Single Supply: 5V@ 50 mA
Die Size: 1.10 mm x 1.20 mm x 0.1 mm

HMC449 Typical Application

The HMC449 is suitable for:
• Pt to Pt & Multi-Pt Radios
• VSAT Radios
• Military EW, ECM, C3I
• Test Instrumentation
• Space

HMC449LC3B General Description

The HMC449LC3B is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS SMT package. When driven by a 0 dBm signal the multiplier provides +9 dBm typical output power from 27 to 31 GHz. The Fo and 3Fo isolations are >25 dBc and >30 dBc respectively at 30 GHz. The HMC449LC3B is ideal for use in LO multiplier chains yielding a reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The HMC449LC3B eliminates the need for wire bonding, allowing the use of surface mount manufacturing techniques.

HMC449LC3B Maximum Ratings

RF Input (Vcc= +5V)
Supply Voltage (Vdd)
Channel Temperature
Continuous Pdiss (T= 85 °C)
derate 8.3 mW/°C above 85 °C)
Thermal Resistance
channel to ground paddle)
Storage Temperature
Operating Temperature

+20 dBm
+6.0 Vdc
175 °C
744 mW

121 °C/W

-65 to +150 °C
-40 to +85 °C

HMC449LC3B Features

·Output Power: +9 dBm
·Wide Input Power Range: -4 to +6 dBm
·Fo Isolation: 30 dBc @ Fout= 28 GHz
·100 kHz SSB Phase Noise: -132 dBc/Hz
·Single Supply: 5V@ 50 mA
·RoHS Compliant 3x3 mm SMT Package

HMC449LC3B Typical Application

The HMC449LC3B is suitable for:
• Point-to-Point & Multi-Point Radios
• VSAT Radios
• Military EW, ECM, C3I
• Test Instrumentation
• Military & Space

HMC451 General Description

The HMC451 is a general purpose GaAs PHEMT MMIC Medium Power Amplifi er which operates between 5.0 and 20.0 GHz. The amplifi er provides 22 dB of gain, +22 dBm of saturated power and 24% PAE from a +5.0 V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifi er approach in multiple radio bands. The HMC451 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.82mm2) size, single supply operation and DC blocked I/Os. All data is tested with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31mm (<12 mils).

HMC451 Maximum Ratings

Drain Bias Voltage (Vdd)	+5.5 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)	+10 dBm
Channel Temperature	175
Continuous Pdiss (T= 85 ) (derate 13 mW/ above 85 )	1.2 W
Thermal Resistance (channel to die bottom)	75 /W
Storage Temperature	-65 to +150
Operating Temperature	-55 to +85

HMC451 Features

Gain: 22 dB
Saturated Output Power: +22 dBm @ 24% PAE
Output IP3: +30 dBm
Single Positive Supply: +5.0 V @ 127 mA
50 Ohm Matched Input/Output
Small Size: 1.35 mm x 1.35 mm x 0.1 mm

HMC451 Typical Application

The HMC451 is ideal for use as a driver amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• LO Driver for HMC Mixers
• Military & Space

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