Features: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz+27 dBm Input P1dBInsertion Loss: 1.5 dB Typical @ 6 GHzNon-Refl ective Design4 x 4 x 1 mm QFN SMT PackageApplicationThe HMC232LP4 is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military Radios, Radar & ECM...
HMC232LP4: Features: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz+27 dBm Input P1dBInsertion Loss: 1.5 dB Typical @ 6 GHzNon-Refl ective Design4 x 4 x 1 mm QFN SMT PackageApplicationThe HMC232LP4 is ideal for:•...
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RF Input Power (Vctl= -5V) (0.5 - 12 GHz) |
+30 dBm (@ +50 °C) |
Control Voltage Range (A & B) | +1.0V to -7.5 Vdc |
Channel Temperature | 150°C |
Thermal Resistance (RTH) (junction to lead) |
94 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC232LP4 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 12 GHz, the switch features >60 dB isolation up to 3 GHz and >42 dB isolation up to 12 GHz. Input P1dB compression is +27 dBm typical, while input IP3 is +50 dBm. The HMC232LP4 switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.