HF40C120ACB, HF40C120ACE, HF40D120ACE Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
HF40C120ACB, HF40C120ACE, HF40D120ACE Datasheet download
Part Number: HF40C120ACB
MFG: IR
Package Cooled: N/A
D/C: 2010+
MFG:IR Package Cooled:N/A D/C:2010+
HF40C120ACB, HF40C120ACE, HF40D120ACE Datasheet download
MFG: IR
Package Cooled: N/A
D/C: 2010+
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Datasheet: HF40A060ACE
File Size: 16007 KB
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Datasheet: HF40C120ACE
File Size: 16033 KB
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Datasheet: HF40d120ACE
File Size: 62763 KB
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The HF40C120ACE has some electrical characteristics (wafer form).When parameter is VFM,the description is forward voltage,the guaranteed (Min/Max) is 2.6V Max.,the test conditions is TJ = 25,IF = 8.0A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 1200V Min.,the test conditions is TJ = 25,IR = 200A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 20A Max.,the test conditions is TJ = 25,VR = 1200V.
The HF40C120ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al,1% Si (3 microns).The chip dimensions is 0.169" x 0.220" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is .015" ± .003".The relevant die mechanical dwg. number is 01-5170.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.
At present there is not too much information about this model.If you are willing to find more about HF40C120ACE,please pay attention to our web! We will promptly update the relevant information.
The HF40D120ACE
has some electrical characteristics (wafer form).When parameter is VF,the description is forward voltage drop,the guaranteed (Min/Max) is 1.3V min,1.7V max,the test conditions is TJ = 25,IF = 10A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 1200V Min.,the test conditions is TJ = 25,IR = 150A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 10A Max.,the test conditions is TJ = 25,VR = 1200V.
The HF40D120ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al,1% Si (3 microns).The chip dimensions is 0.169" x 0.220" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is 310m,+/-15m.The relevant die mechanical dwg. number is 01-5328.The minimum street width is 100m.The reject ink dot size is 0.25 mm diameter minimum.The ink dot location is consistent throughout same wafer lot.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.The recommended die attach conditions is for optimum electrical results,die attach temperature should not exceed 300.
At present there is not too much information about this model.If you are willing to find more about HF40D120ACE,please pay attention to our web! We will promptly update the relevant information.