HF40D120ACE

The HF40D120ACE has some electrical characteristics (wafer form).When parameter is VF,the description is forward voltage drop,the guaranteed (Min/Max) is 1.3V min,1.7V max,the test conditions is TJ = 25,IF = 10A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 1200V Min.,the test conditions is TJ = 25,IR = 150A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 10A Max.,the test conditions is TJ = 25,VR = 1200V.

The HF40D120ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al,1% Si (3 microns).The chip dimensions is 0.169" x 0.220" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is 310m,+/-15m.The relevant die mechanical dwg. number is 01-5328.The minimum street width is 100m.The reject ink dot size is 0.25 mm diameter minimum.The ink dot location is consistent throughout same wafer lot.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.The recommended die attach conditions is for optimum electrical results,die attach temperature should not exceed 300.

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