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Hewlett Packard's HBFP-0405 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
HBFP-0405 provides an associated gain of 18 dB, noise figure of 1.2 dB, and P1dB of 5 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0405 is ideal for cellular/ PCS as well as for C-Band and Ku-Band applications.
This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.
HBFP-0405 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
15.0
VCEO
Collector-Emitter Voltage
V
4.5
IC
Collector Current
mA
12
PT
Power Dissipation[2]
mW
54
Tj
Junction Temperature
150
TSTG
Storage Temperature
-65 to 150
HBFP-0405 Features
• Ideal for High Gain, Low Current Applications • Typical Performance at 1.8 GHz Associated Gain of 18 dB and Noise Figure of 1.2 dB at 2 V and 2 mA P1dB of 5 dBm at 2 V and 5 mA • Miniature 4-lead SC-70 (SOT-343) Plastic Package • Transition Frequency fT = 25 GHz
HBFP-0405 Typical Application
• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones • Oscillator for TV Delivery and TVRO Systems up to 12 GHz