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HBFP0420_1220053

Features: • Ideal for High Gain, Low Noise Applications• Transition Frequency fT = 25 GHz• Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm t 2 V and 20 mA• Can be Used Without Impedance MatchingPinoutSpecific...

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HBFP0420_1220053: Features: • Ideal for High Gain, Low Noise Applications• Transition Frequency fT = 25 GHz• Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V...

HBFP0420_1220053 Data Sheet

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Part Number:
HBFP0420_1220053
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Ideal for High Gain, Low Noise Applications
• Transition Frequency fT = 25 GHz
• Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm  t 2 V and 20 mA
• Can be Used Without Impedance Matching




Pinout

Connection Diagram


Specifications

Symbol Parameter Units Absolute
Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 15.0
VCEO Collector-Emitter Voltage V 4.5
IC Collector Current mA 36
PT Power Dissipation [2] mW 162
Tj Junction Temperature 150
TSTG Storage Temperature -65 to 150
Thermal Resistance: jc = 300°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. PT limited by maximum ratings.


Description

Hewlett Packard's HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

HBFP-0420 provides an associated gain of 17 dB, noise figure of  1.1 dB, and P1dB of 12 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0420 is ideal for cellular/PCS handsets as well as  for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applica-tions at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.




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