HBFP-0405

Features:

• Ideal for High Gain, Low Current Applications
• Typical Performance at 1.8 GHz Associated Gain of 18 dB and Noise Figure of 1.2 dB at 2 V and 2 mA P1dB of 5 dBm at 2 V and 5 mA
• Miniature 4-lead SC-70 (SOT-343) Plastic Package
• Transition Frequency fT = 25 GHz


Application

• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones
• Oscillator for TV Delivery and TVRO Systems up to 12 GHz


Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	15.0
VCEO	Collector-Emitter Voltage	V	4.5
IC	Collector Current	mA	12
PT	Power Dissipation[2]	mW	54
Tj	Junction Temperature		150
TSTG	Storage Temperature		-65 to 150

Description

Hewlett Packard's HBFP-0405 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

HBFP-0405 provides an associated gain of 18 dB, noise figure of 1.2 dB, and P1dB of 5 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0405 is ideal for cellular/ PCS as well as for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.