H9910, H9926CTS, H9939068/H Selling Leads, Datasheet
MFG:NI Package Cooled:SOP-8P D/C:07+
H9910, H9926CTS, H9939068/H Datasheet download
Part Number: H9910
MFG: NI
Package Cooled: SOP-8P
D/C: 07+
H9910, H9926CTS, H9939068/H
- Table of contents:
Info of H9910
Info of H9926CTS
Info of H9939068/H
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About H9910
PDF/DataSheet Download
Datasheet: H9910
File Size: 108803 KB
Manufacturer:
Download : Click here to Download
About H9901-180
PDF/DataSheet Download
Datasheet: H9901-180
File Size: 782341 KB
Manufacturer: GILWAY [Gilway Technical Lamp]
Download : Click here to Download
About H9901-180
PDF/DataSheet Download
Datasheet: H9901-180
File Size: 782341 KB
Manufacturer: GILWAY [Gilway Technical Lamp]
Download : Click here to Download
H9926CTS General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
H9926CTS Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
| Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Total Power Dissipation @TA=25°C Total Power Dissipation @TA=75°C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient*2 |
VDS VGS ID IDM PD PD Tj,Tstg RJA |
20 ±12 6 30 1.5 0.96 -55 to +150 83 |
V V A A W W °C °C/W |
*2: 1-in2 2oz Cu PCB board
H9926CTS Features
• RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
H9926CTS Typical Application
• Battery Protection
• Load Switch
• Power Management
• Load Switch
• Power Management
H9926CTS Connection Diagram
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