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H9926CTS

Features: • RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully Characterized Avalanche Voltage and Current• Ideal for Li ion Battery Pack ApplicationsApplic...

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SeekIC No. : 004357980 Detail

H9926CTS: Features: • RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully...

H9926CTS Data Sheet

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Part Number:
H9926CTS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications


Application

• Battery Protection
• Load Switch
• Power Management


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25°C
Total Power Dissipation @TA=75°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
VDS
VGS
ID
IDM
PD
PD
Tj,Tstg
RJA
20
±12
6
30
1.5
0.96
-55 to +150
83
V
V
A
A
W
W
°C
°C/W
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board


Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926CTS has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)




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