H6968CTS, H6968S, H69OI Selling Leads, Datasheet
MFG:SGS THOMAS Package Cooled:SOP8 D/C:N/A
H6968CTS, H6968S, H69OI Datasheet download
Part Number: H6968CTS
MFG: SGS THOMAS
Package Cooled: SOP8
D/C: N/A
H6968CTS, H6968S, H69OI
- Table of contents:
Info of H6968CTS
Info of H6968S
Info of H69OI
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PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
H6968CTS Maximum Ratings
|
Item |
Symbol |
Ratings |
Units |
| Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Total Power Dissipation @TA=25 Total Power Dissipation @TA=75 Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 ESD Protect on Gate and Source |
VDS |
20 ±12 6.5 30 1.5 0.96 -55 to +150 83 2000 |
V |
H6968CTS Features
• RDS(on)<32m@VGS=2.5V, ID=5.5A
• RDS(on)<24m@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
• RDS(on)<24m@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
H6968CTS Connection Diagram
H6968S Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±12 | V |
| ID | Drain Current (Continuous) | 6.5 | A |
| IDM | Drain Current (Pulsed) *1 | 30 | A |
| PD | Total Power Dissipation @TA=25oC | 2 | W |
| PD | Total Power Dissipation @TA=75oC | 1.3 | W |
| Tj, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| RJA | Thermal Resistance Junction to Ambient (PCB mounted)*2 | 62.5 | °C/W |
*2: 1-in2 2oz Cu PCB board
H6968S Features
• RDS(on)=32m@VGS=2.5V, ID=5.5A
• RDS(on)=24m@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
• RDS(on)=24m@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
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