Features: • RDS(on)=32m@VGS=2.5V, ID=5.5A• RDS(on)=24m@VGS=4.5V, ID=6.5A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Li ion Battery Packs Use• Designed for Battery Switch Appliactions• E...
H6968CS: Features: • RDS(on)=32m@VGS=2.5V, ID=5.5A• RDS(on)=24m@VGS=4.5V, ID=6.5A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance• Spec...
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Symbol | Parameter | Ratings | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±12 | V |
ID | Drain Current (Continuous) | 6.5 | A |
IDM | Drain Current (Pulsed) *1 | 30 | A |
PD | Total Power Dissipation @TA=25oC | 2 | W |
PD | Total Power Dissipation @TA=75oC | 1.3 | W |
Tj, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
RJA | Thermal Resistance Junction to Ambient (PCB mounted)*2 | 62.5 | °C/W |