Features: • RDS(on)<32m@VGS=2.5V, ID=5.5A• RDS(on)<24m@VGS=4.5V, ID=6.5A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Li ion Battery Packs Use• Designed for Battery Switch Appliactions...
H6968CTS: Features: • RDS(on)<32m@VGS=2.5V, ID=5.5A• RDS(on)<24m@VGS=4.5V, ID=6.5A• Advanced Trench Process Technology• High Density Cell Design for Ultra Low On-Resistance•...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item |
Symbol |
Ratings |
Units |
Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Total Power Dissipation @TA=25 Total Power Dissipation @TA=75 Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 ESD Protect on Gate and Source |
VDS |
20 ±12 6.5 30 1.5 0.96 -55 to +150 83 2000 |
V |