GT60M322, GT60M323, GT60N321 Selling Leads, Datasheet
MFG:TOHSIBA Package Cooled:TO- D/C:07+
GT60M322, GT60M323, GT60N321 Datasheet download
Part Number: GT60M322
MFG: TOHSIBA
Package Cooled: TO-
D/C: 07+
MFG:TOHSIBA Package Cooled:TO- D/C:07+
GT60M322, GT60M323, GT60N321 Datasheet download
MFG: TOHSIBA
Package Cooled: TO-
D/C: 07+
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PDF/DataSheet Download
Datasheet: GT60M322
File Size: 195747 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GT60M323
File Size: 197671 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GT60N321
File Size: 182322 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
Parameter | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 900 | V | |
Gate-emitter voltage | VGES | ±25 | V | |
@ Tc = 100 | IC | 31 | A | |
@ Tc = 25 | 60 | |||
Pulsed collector current | ICP | 120 | V | |
Diode forward current | DC | IF | 15 | A |
Pulse | IFP | 120 | A | |
Collector power dissipation |
@ Tc = 100 | PC | 80 | W |
@ Tc = 25 |
200 | |||
Junction Temperature | Tj | 150 | ||
Storage Temperature Range | Tstg | −55 to 150 |
Characteristics | symbol | Rating | Unit | |
Collector-Emitter Voltage | VCES |
1000 | V | |
Gate-Emitter Voltage | V GES | =25 | V | |
Collector Current | DC | IC | 60 | A |
1 ms | ICP |
120 | ||
Emitter-Collector Forward Current |
DC | IECF | 15 | A |
1 ms | IECFP | 120 | ||
Collector Power Dissipation (Tc 25!aC) |
PC | 170 | W | |
Junction Temperature | Tj | 150 | OC | |
Storage Temperature | Tstg | -5 -150 | OC | |
Screw Torque | - | 0.B | N.m |