GT60M323 Selling Leads, Price trend, GT60M323 DataSheet download, circuit diagram from SeekIC.com

Features: • Enhancement mode type• High speed : tf = 0.09 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)• FRD included between emitter and collector• TO-3P(LH) (Toshiba package name)Specifications Parameter Symbol Rating Un...

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SeekIC No. : 004357058 Detail

GT60M323: Features: • Enhancement mode type• High speed : tf = 0.09 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)• FRD included between emitter an...

GT60M323 Data Sheet

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Part Number:: GT60M323
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/21

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Recent History
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Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 6...
GT60J323 evaluate
Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• L...

Product Details

Description

Features:

• Enhancement mode type
• High speed : tf= 0.09 s (typ.) (I_C = 60 A)
• Low saturation voltage : V_{CE (sat)} = 2.3 V (typ.) (I_C = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)

Specifications

Parameter		Symbol	Rating	Unit
Collector-emitter voltage		V_CES	900	V
Gate-emitter voltage		V_GES	±25	V
	@ Tc = 100	I_C	31	A
	@ Tc = 25	I_C	60	A
Pulsed collector current		I_CP	120	V
Diode forward current	DC	I_F	15	A
Diode forward current	Pulse	I_FP	120	A
Collector power dissipation	@ Tc = 100	P_C	80	W
Collector power dissipation	@ Tc = 25	P_C	200	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55 to 150

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GT60M323

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