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GT60J323

Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• FRD included between emitter and collector• Fourth generation IGBT• TO-3P(LH) (Toshiba package name)Specifications ...

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GT60J323: Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• FRD included between emitter and c...

GT60J323 Data Sheet

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Part Number:
GT60J323
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)




Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VEBS
±25
V
Collector current
@ Tc = 100
IC
33
A
@ Tc = 25
ICP
60
Pulsed collector current  

ICP
120
A
Diode forward current
DC
IF
30
A
1 ms
IFP
120
Collector power
dissipation
@ Tc = 100
PC
68
W
@ Tc = 25
170
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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