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GT60M303(Q)

IGBT Transistors 900V/60A DIS+FRD Trench

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SeekIC No. : 00143926 Detail

GT60M303(Q): IGBT Transistors 900V/60A DIS+FRD Trench

GT60M303(Q) Data Sheet

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Part Number:
GT60M303(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 900 V
Maximum Gate Emitter Voltage : +/- 25 V Continuous Collector Current at 25 C : 60 A
Gate-Emitter Leakage Current : +/- 500 nA Power Dissipation : 170 W
Package / Case : TO-3P Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Maximum Operating Temperature :
Configuration : Single
Power Dissipation : 170 W
Continuous Collector Current at 25 C : 60 A
Maximum Gate Emitter Voltage : +/- 25 V
Collector- Emitter Voltage VCEO Max : 900 V
Gate-Emitter Leakage Current : +/- 500 nA
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT60M303(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 60A
Power - Max170W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT60M303 Q
GT60M303Q



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