FW306, FW307, FW313 Selling Leads, Datasheet
MFG:SANYO Package Cooled:SOP-8 D/C:1997
FW306, FW307, FW313 Datasheet download
Part Number: FW306
MFG: SANYO
Package Cooled: SOP-8
D/C: 1997
FW306, FW307, FW313
- Table of contents:
Info of FW306
Info of FW307
Info of FW313
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About FW306
PDF/DataSheet Download
Datasheet: FW306
File Size: 17898 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
About FW307
PDF/DataSheet Download
Datasheet: FW307
File Size: 45200 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
About FW313
PDF/DataSheet Download
Datasheet: FW313
File Size: 63188 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
FW306 Maximum Ratings
| N-channel | P-channel | unit | |||
| Drain to Source Voltage | VDSS | 30 | 30 | V | |
| Gate to Source Voltage | VGSS | ±25 | ±25 | V | |
| Drain Current(DC) | ID | 5 | -3 | A | |
| Drain Current(Pulse) | IDP | PW10µS, dutycycle1% | 32 | -32 | A |
| Allowable power Dissipation | PD | Mounted on ceramic board (1000mm2 * 0.8mm) 1unit |
1.7 | W | |
| Total Dissipation | PT | Mounted on ceramic board (1000mm2 * 0.8mm) |
2.0 | W | |
| Channel Temperature | Tch | 150 | °C | ||
| Storage Temperature | Tstg | -55 to ±150 | °C | ||
FW306 Features
• High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
• Low ON-state resistance.
FW307 Maximum Ratings
| Parameter | Symbol | Conditions | Ratings | unit | |
| N-channel | P-channel | ||||
| Drain-to-Source Voltage | VDSS | 250 | -250 | V | |
| Gate-to-Source Voltage | VGSS | ±30 | ±30 | V | |
| Drain Current(DC) | ID | 1 | -0.7 | A | |
| Drain Current(Pulse) | IDP | PW10µS, dutycycle1% | 5 | -3 | A |
| Allowable power Dissipation | PD | Mounted on a ceramic board (900mm2*0.8mm)1unit | 1.7 | W | |
| Total Dissipation | PT | Mounted on a ceramic board (900mm2*0.8mm) | 2.0 | W | |
| Channel Temperature | Tch | 150 | °C | ||
| Storage Temperature | Tstg | -55 to ±150 | °C | ||
FW307 Features
• The FW307 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
• Excellent ON-resistance characteristic.
FW313 Maximum Ratings
-
| Parameter | Symbol | Conditions | Ratings | unit | |
| N-channel | P-channel | ||||
| Drain-to-Source Voltage | VDSS | 30 | -30 | V | |
| Gate-to-Source Voltage | VGSS | ±20 | ±20 | V | |
| Drain Current(DC) | ID | 7 | -5 | A | |
| Drain Current(Pulse) | IDP | PW10µS, dutycycle1% | 28 | -20 | A |
| Allowable power Dissipation | PD | Mounted on a ceramic board (1000mm2*0.8mm)1unit | 1.7 | W | |
| Total Dissipation | PT | Mounted on a ceramic board (1000mm2*0.8mm) | 2.0 | W | |
| Channel Temperature | Tch | 150 | °C | ||
| Storage Temperature | Tstg | -55 to ±150 | °C | ||
FW313 Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.
· High-density mounting.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.
· High-density mounting.
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