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FW306

Features: • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.• Low ON-state resistance.Specifications N-channel P-channel unit Drain to Source Voltage VDSS 3...

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SeekIC No. : 004345594 Detail

FW306: Features: • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.• Low ON-sta...

FW306 Data Sheet

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Part Number:
FW306
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
• Low ON-state resistance.




Specifications

  N-channel P-channel unit
Drain to Source Voltage VDSS   30 30 V
Gate to Source Voltage VGSS   ±25 ±25 V
Drain Current(DC) ID   5 -3 A
Drain Current(Pulse) IDP PW10µS, dutycycle1% 32 -32 A
Allowable power Dissipation PD Mounted on ceramic board
(1000mm2 * 0.8mm) 1unit		 1.7 W
Total Dissipation PT Mounted on ceramic board
(1000mm2 * 0.8mm)		 2.0 W
Channel Temperature Tch   150 °C
Storage Temperature Tstg   -55 to ±150 °C



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