Features: · Low ON resistance.· Ultrahigh-speed switching.· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.· High-density mounting.Specifications- Parameter Symbol Conditions Ratings unit N-channel P-channe...
FW313: Features: · Low ON resistance.· Ultrahigh-speed switching.· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package.· High-density...
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Parameter | Symbol | Conditions | Ratings | unit | |
N-channel | P-channel | ||||
Drain-to-Source Voltage | VDSS | 30 | -30 | V | |
Gate-to-Source Voltage | VGSS | ±20 | ±20 | V | |
Drain Current(DC) | ID | 7 | -5 | A | |
Drain Current(Pulse) | IDP | PW10µS, dutycycle1% | 28 | -20 | A |
Allowable power Dissipation | PD | Mounted on a ceramic board (1000mm2*0.8mm)1unit | 1.7 | W | |
Total Dissipation | PT | Mounted on a ceramic board (1000mm2*0.8mm) | 2.0 | W | |
Channel Temperature | Tch | 150 | °C | ||
Storage Temperature | Tstg | -55 to ±150 | °C |