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FPD1000AS, FPD2000AS, FPD37M707QFP

Table of contents:
Info of FPD1000AS
Info of FPD2000AS
Info of FPD37M707QFP

FPD1000AS, FPD2000AS, FPD37M707QFP Selling Leads, Datasheet

MFG:RFIC Package Cooled:N/A D/C:Filtr

FPD1000AS, FPD2000AS, FPD37M707QFP Picture

FPD1000AS, FPD2000AS, FPD37M707QFP Datasheet download

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Part Number: FPD1000AS

MFG: RFIC

Package Cooled: N/A

D/C: Filtr

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FPD1000AS General Description

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.

FPD1000AS Maximum Ratings

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	V_DS	-3V < V_GS < +0V		12	V
Gate-Source Voltage	V_GS	0V < V_DS < +8V		-3	V
Drain-Source Current	I_DS	For V_DS > 2V		I_DSS	mA
Gate Current	I_G	Forward or reverse current		+20/-20	mA
RF Input Power²	P_IN	Under any acceptable bias state		575	mW
Channel Operating Temperature	T^_CH	Under any acceptable bias state		175	ºC
Storage Temperature	T_STG	Non-Operating Storage	-40	150	ºC
Total Power Dissipation	P_TOT	See De-Rating Note below		6	W
Gain Compression	Comp.	Under any bias conditions		5	dB
Simultaneous Combination of Limits³		2 or more Max. Limits		80	%

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT=3.5 - (0.04W/°C) x T_PACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT= 6.0 - (0.04 x (55 22)) = 4.68W
• For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package.
• Note on Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads.
• HANDLING PRECAUTIONS

FPD2000AS General Description

The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitterb amplifiers, as well as other power applications in WLL/WLAN amplifiers.

FPD2000AS Maximum Ratings

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	V_DS	-3V < V_GS < +0V		12	V
Gate-Source Voltage	V_GS	0V < V_DS < +8V		-3	V
Drain-Source Current	I_DS	For V_DS > 2V		I_DSS	mA
Gate Current	I_G	Forward or reverse current		+50/-2	mA
RF Input Power²	P_IN	Under any acceptable bias state		900	mW
Channel Operating Temperature	T^_CH	Under any acceptable bias state		175	ºC
Storage Temperature	T_STG	Non-Operating Storage	-40	150	ºC
Total Power Dissipation	P_TOT	See De-Rating Note below		7.6	W
Gain Compression	Comp.	Under any bias conditions		5	dB
Simultaneous Combination of Limits³		2 or more Max. Limits		80	%

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT=7.6 - (0.05W/°C) x T_PACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT= 7.6-(0.05*(55-22))=5.95W
• The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator.

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