FLL1200IU-2, FLL1200IU-2B, FLL1200IU-3 Selling Leads, Datasheet
MFG:Fujitsu Package Cooled:WLL
FLL1200IU-2, FLL1200IU-2B, FLL1200IU-3 Datasheet download
Part Number: FLL1200IU-2
MFG: Fujitsu
Package Cooled: WLL
D/C:
FLL1200IU-2, FLL1200IU-2B, FLL1200IU-3
- Table of contents:
Info of FLL1200IU-2
Info of FLL1200IU-2B
Info of FLL1200IU-3
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About FLL1200IU-2
PDF/DataSheet Download
Datasheet: FLL1200IU-2
File Size: 94449 KB
Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
Download : Click here to Download
About FLL1200IU-2
PDF/DataSheet Download
Datasheet: FLL1200IU-2
File Size: 94449 KB
Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
Download : Click here to Download
About FLL1200IU-3
PDF/DataSheet Download
Datasheet: FLL1200IU-3
File Size: 108956 KB
Manufacturer: EUDYNA [Eudyna Devices Inc]
Download : Click here to Download
FLL1200IU-2 General Description
The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.
Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLL1200IU-2 Maximum Ratings
| Item | Symbol | Condition | Rating | Unit |
| Drain-Source Voltage | VDS | 15 | V | |
| Gate-Source Voltage | VGS | -5 | V | |
| Total Power Dissipation | PT | Tc = 25°C | 187.5 | W |
| Storage Temperature | Tstg | -65 to +175 | °C | |
| Channel Temperature | Tch | +175 | °C |
FLL1200IU-2 Features
• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 1800 to 2000 MHz.
• Suitable for class AB operation.
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 1800 to 2000 MHz.
• Suitable for class AB operation.
FLL1200IU-3 General Description
The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.
FLL1200IU-3 Maximum Ratings
| Parameter |
Symbol |
Condition |
Rating |
Unit |
| Drain-Source Voltage |
VDS |
15 |
V | |
| Gate-Source Voltage |
VGS |
-5 |
V | |
| Total Power Dissipation |
PT |
Tc = 25 |
187.5 |
W |
| Storage Temperature |
Tstg |
-65 to +175 |
||
| Channel Temperature |
Tch |
+175 |
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with gate resistance of 10.
3. The operating channel temperature (Tch) should not exceed 145.
FLL1200IU-3 Features
• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 2400 to 2500 MHz.
• Suitable for class AB operation
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 2400 to 2500 MHz.
• Suitable for class AB operation
FLL1200IU-3 Typical Application
• Solid State Base-Station Power Amplifier.
• WLL Communication Systems.
• WLL Communication Systems.
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