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FLL1200IU-2

Features: • Push-Pull Configuration• High Power Output: 120W (Typ.)• High PAE: 44%.• Broad Frequency Range: 1800 to 2000 MHz.• Suitable for class AB operation.Specifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Sourc...

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SeekIC No. : 004342071 Detail

FLL1200IU-2: Features: • Push-Pull Configuration• High Power Output: 120W (Typ.)• High PAE: 44%.• Broad Frequency Range: 1800 to 2000 MHz.• Suitable for class AB operation.Specifica...

FLL1200IU-2 Data Sheet

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Part Number:
FLL1200IU-2
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 1800 to 2000 MHz.
• Suitable for class AB operation.


Specifications

Item Symbol Condition Rating Unit
Drain-Source Voltage VDS   15 V
Gate-Source Voltage VGS   -5 V
Total Power Dissipation PT Tc = 25°C 187.5 W
Storage Temperature Tstg   -65 to +175 °C
Channel Temperature Tch   +175 °C



Description

The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. FLL1200IU-2 is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.

Fujitsu's stringent Quality Assurance Program of FLL1200IU-2 assures the highest reliability and consistent performance.




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