FLL410IK-4C

Features:

・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=11.5dB(Typ.)
・High PAE: add=44%(Typ.)
・Broad Band: 3.4~3.7GHz
・Hermetically Sealed Package


Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	VDS		15	V
Gate-Source Voltage	VGS		-5	V
Total Power Dissipation	PT	Tc = 25°C	230	W
Storage Temperature	Tstg		-65 to +175	°C
Channel Temperature	Tch		+175	°C

Description

The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 3.7 GHz band amplifiers. FLL410IK-4C is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance.