MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:N/A
FGH40N6S2, FGH40N6S2D, FGH50N3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-247
D/C: N/A
Description: IGBT N-CH PT 300V 75A TO247
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PDF/DataSheet Download
Datasheet: FGH40N6S2
File Size: 180574 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FGH40N6S2D
File Size: 213302 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FGH50N3
File Size: 188275 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49340 Diode formerly Developmental Type TA49391
|
Symbol |
Parameter |
Ratings |
Units |
|
BVCES |
Collector to Emitter Breakdown Voltage |
600 |
V |
|
IC25 |
Collector Current Continuous, TC = 25°C |
75 |
A |
|
IC110 |
Collector Current Continuous, TC = 110°C |
35 |
A |
|
ICM |
Collector Current Pulsed (Note 1) |
180 |
A |
|
VGES |
Gate to Emitter Voltage Continuous |
±20 |
V |
|
VGEM |
Gate to Emitter Voltage Pulsed |
±30 |
V |
|
SSOA |
Switching Safe Operating Area at TJ = 150°C, Figure 2 |
100A at 600V |
A |
|
EAS |
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V |
260 |
mJ |
|
PD |
Power Dissipation Total TC = 25°C |
290 |
W |
| Power Dissipation Derating TC > 25°C |
2.33 |
W/°C | |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
°C |
|
TSTG |
Storage Junction Temperature Range |
-55 to 150 |
°C |
| Technical/Catalog Information | FGH50N3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | 75A |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 30A |
| Power - Max | 463W |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGH50N3 FGH50N3 |
The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies.
|
Symbol |
Parameter |
Ratings |
Units |
|
BVCES |
Collector to Emitter Breakdown Voltage |
300 |
V |
|
IC25 |
Collector Current Continuous, TC = 25°C |
75 |
A |
|
IC110 |
Collector Current Continuous, TC = 110°C |
75 |
A |
|
ICM |
Collector Current Pulsed (Note 1) |
240 |
A |
|
VGES |
Gate to Emitter Voltage Continuous |
±20 |
V |
|
VGEM |
Gate to Emitter Voltage Pulsed |
±30 |
V |
|
SSOA |
Switching Safe Operating Area at TJ = 150°C, Figure 2 |
150A at 300V |
|
|
EAS |
Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V |
800 |
mJ |
|
EARV |
Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V |
800 |
mJ |
|
PD |
Power Dissipation Total TC = 25°C |
463 |
W |
| Power Dissipation Derating TC > 25°C |
3.7 |
W/°C | |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
°C |
|
TSTG |
Storage Junction Temperature Range |
-55 to 150 |
°C |
|
tSC |
Short Circuit Withstand Time (Note 2) |
8 |
µs |
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