MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FGH20N6S2D, FGH30N6S2, FGH30N6S2D Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: IGBT N-CH SMPS 600V 45A TO247
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Datasheet: FGH20N6S2D
File Size: 237958 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FGH30N6S2
File Size: 182223 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FGH30N6S2D
File Size: 288422 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
The FGH30N6S2 is Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are specially designed for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.SMPS II LGC devices are widely used in the fields of Power Factor Correction (PFC) circuits,full bridge topologies,half bridge topologies,push-Pull circuits,uninterruptible power supplies and zero voltage and zero current switching circuits.
Here you can get some information about the features. The 100kHz operation is at 390V, 14A.The 200kHZ operation is at 390V,9A.Besides,it has 600V switching SOA capability.The typical fall time is 90ns at TJ = 125oC.The low gate charge is 23 nC at VGE = 15V.The low plateau voltage is 6.5V typical.The UIS rated is 150mJ.What's more,it has low conduction loss.
You have to understand the maximum ratings at TC= 25 if you want to purchase the product.The BVCES (Collector to Emitter Breakdown Voltage) is 600 V.The IC25 (Collector Current Continuous,TC = 25) is 45 A.The IC110 (Collector Current Continuous,TC = 110) is 20 A.The ICM (Collector Current Pulsed) is 108 A.The VGES (Gate to Emitter Voltage Continuous) is ±20 V.The VGEM (Gate to Emitter Voltage Pulsed) is ±30 V.The SSOA (Switching Safe Operating Area at TJ = 150) is 60A at 600V.The EAS (Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V) is 150 mJ.The PD (Power Dissipation Total TC = 25°C) is 167 W.The Power Dissipation Derating is 1.33 W/ at TC > 25.The TJ (Operating Junction Temperature Range) is from -55 to 150 .The TSTG (Storage Junction Temperature Range) is from -55 to 150 .
The following is about the electrical characteristics at TJ = 25.The Minimum BVCES (Collector to Emitter Breakdown Voltage) is 600 V at IC = 250A, VGE = 0.The Min BVECS (Emitter to Collector Breakdown Voltage) is 10 V and the Max. is 25 V at IC = 10mA, VGE = 0.The Max. ICES (Collector to Emitter Leakage Current) is 100 A at VCE = 600V,TJ = 25 and 2 mA at VCE = 600V,TJ = 125.The Max IGES (Gate to Emitter Leakage Current) is ±250 nA at VGE = ± 20V.The Typical VCE(SAT) (Collector to Emitter Saturation Voltage) is 2.0 V and the Max is 2.5V at IC = 12A,VGE = 15V,TJ = 25.The Typical VCE(SAT) (Collector to Emitter Saturation Voltage) is 1.7 V and the Max is 2.0 V at IC = 12A,VGE = 15V,TJ = 125.
| Technical/Catalog Information | FGH30N6S2D |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 45A |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGH30N6S2D FGH30N6S2D |
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava-anche capability (UIS). These LGC devices shorten delay imes, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched mode power supply applications where low conduction oss, fast switching times and UIS capability are essential.SMPS II LGC devices have been specially designed for:
| Symbol | Parameter | Ratings | Units |
| BVCES | Collector to Emitter Breakdown Voltage | 600 | V |
| IC25 | Collector Current Continuous, TC = 25°C | 45 | A |
| IC110 | Collector Current Continuous, TC = 110°C | 20 | A |
| ICM | Collector Current Pulsed (Note 1) | 108 | A |
| VGES | Gate to Emitter Voltage Continuous | ±20 | V |
| VGEM | Gate to Emitter Voltage Pulsed | ±30 | V |
| SSOA | Switching Safe Operating Area at TJ = 150°C, Figure 2 | 60A at 600V | |
| EAS | Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V | 150 | mJ |
| PD | Power Dissipation Total TC = 25°C | 167 | W |
| Power Dissipation Derating TC > 25°C | 1.33 | W/°C | |
| TJ | Operating Junction Temperature Range | -55 to 150 | °C |
| TSTG | Storage Junction Temperature Range | -55 to 150 | °C |
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