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FGA25N120AND, FGA25N120ANDTU, FGA25N120ANTD

Table of contents:
Info of FGA25N120AND
Info of FGA25N120ANDTU
Info of FGA25N120ANTD

FGA25N120AND, FGA25N120ANDTU, FGA25N120ANTD Selling Leads, Datasheet

MFG:Fairchild Package Cooled:04+ D/C:3000

FGA25N120AND, FGA25N120ANDTU, FGA25N120ANTD Picture

FGA25N120AND, FGA25N120ANDTU, FGA25N120ANTD Datasheet download

Five Points

Part Number: FGA25N120AND

MFG: Fairchild

Package Cooled: 04+

D/C: 3000

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FGA25N120AND General Description

Employing NPT technology, Fairchild's AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

FGA25N120AND Maximum Ratings

Symbol	Description	FGA25N120AND	Units
V_CES	Collector-Emitter Voltage	1200	V
V_GES	Gate-Emitter Voltage	± 20	V
I_C	Collector Current @ TC = 25°C	40	A
I_C	Collector Current @ TC = 100°C	25	A
I_{CM (1)}	Pulsed Collector Current	75	A
I_F	Diode Continuous Forward Current	25	A
I_FM	Diode Maximum Forward Current	150	A
P_D	Maximum Power Dissipation @ TC = 25°C	310	W
P_D	Maximum Power Dissipation @ TC = 100°C	125	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300	°C

FGA25N120AND Features

• High speed switching
• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 235ns (typ.)

FGA25N120AND Typical Application

·Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

FGA25N120ANTD General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

FGA25N120ANTD Maximum Ratings

Symbol	Description		FGA25N120ANTD	Units
V_CES	Collector-Emitter Voltage		1200	V
V_GES	Gate-Emitter Voltage		± 20	V
I_C	Collector Current	@ T_C = 25°C	50	A
I_C	Collector Current	@ T_C= 100°C	25	A
I_CM	Pulsed Collector Current (Note 1)		75	A
I_F	Diode Continuous Forward Current	@ T_C = 100°C	25	A
I_FM	Diode Maximum Forward Current		150	A
P_D	Maximum Power Dissipation	@ T_C = 25°C	312	W
P_D	Maximum Power Dissipation	@ T_C = 100°C	125	W
T_J	Operating Junction Temperature		-55 to +150	°C
Tstg	Storage Temperature Range		-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds		300	°C

FGA25N120ANTD Features

• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V _CE(sat), t_yp = 2.0V @ I_C = 25A and T_C = 25°C
• Low switching loss: E_off, t_yp = 0.96mJ @ I_C = 25A and T_C = 25°C
• Extremely enhanced avalanche capability

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