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Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation voltage: V CE(sat), typ = 2.0V @ IC = 25A and TC = 25°C• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C• Extremely enhanced avalanche capabilitySpecifications Symbol ...

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SeekIC No. : 004341438 Detail

FGA25N120ANTD: Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation voltage: V CE(sat), typ = 2.0V @ IC = 25A and TC = 25°C• Low switching loss: Eoff, typ = 0.96mJ ...

FGA25N120ANTD Data Sheet

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Part Number:: FGA25N120ANTD
Supply Ability:: 5000

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Upload time: 2024/12/19

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US $2.07 - 2.8 / Piece

IGBT Transistors 1200V N-Chan Trench
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US $1.43 - 2.17 / Piece

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Product Details

Description

Features:

• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V _CE(sat), t_yp = 2.0V @ I_C = 25A and T_C = 25°C
• Low switching loss: E_off, t_yp = 0.96mJ @ I_C = 25A and T_C = 25°C
• Extremely enhanced avalanche capability

Specifications

Symbol	Description		FGA25N120ANTD	Units
V_CES	Collector-Emitter Voltage		1200	V
V_GES	Gate-Emitter Voltage		± 20	V
I_C	Collector Current	@ T_C = 25°C	50	A
I_C	Collector Current	@ T_C= 100°C	25	A
I_CM	Pulsed Collector Current (Note 1)		75	A
I_F	Diode Continuous Forward Current	@ T_C = 100°C	25	A
I_FM	Diode Maximum Forward Current		150	A
P_D	Maximum Power Dissipation	@ T_C = 25°C	312	W
P_D	Maximum Power Dissipation	@ T_C = 100°C	125	W
T_J	Operating Junction Temperature		-55 to +150	°C
Tstg	Storage Temperature Range		-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds		300	°C

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT FGA25N120ANTD offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device FGA25N120ANTD is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

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