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FGA25N120ANTD

Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation voltage: V CE(sat), typ = 2.0V @ IC = 25A and TC = 25°C• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C• Extremely enhanced avalanche capabilitySpecifications Symbol ...

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SeekIC No. : 004341438 Detail

FGA25N120ANTD: Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation voltage: V CE(sat), typ = 2.0V @ IC = 25A and TC = 25°C• Low switching loss: Eoff, typ = 0.96mJ ...

FGA25N120ANTD Data Sheet

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Part Number:
FGA25N120ANTD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/19

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Product Details

Description



Features:

• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V CE(sat), typ = 2.0V @ IC = 25A and TC = 25°C
• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability


Specifications

Symbol
Description
FGA25N120ANTD
Units
VCES
 Collector-Emitter Voltage
1200
V
VGES
 Gate-Emitter Voltage
± 20
V
IC
 Collector Current @ TC = 25°C
50
A
Collector Current @ TC = 100°C
25
A
ICM
 Pulsed Collector Current (Note 1)
75
A
IF
 Diode Continuous Forward Current @ TC = 100°C
25
A
IFM
 Diode Maximum Forward Current
150
A
PD
 Maximum Power Dissipation @ TC = 25°C
312
W
Maximum Power Dissipation @ TC = 100°C
125
W
TJ
 Operating Junction Temperature
-55 to +150
°C
Tstg
 Storage Temperature Range
-55 to +150
°C
TL
 Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
°C



Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT FGA25N120ANTD offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device FGA25N120ANTD is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.




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