FGA20N120FTDTU

IGBT Transistors 1200V N-Chan Trench

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FGA20N120FTDTU: IGBT Transistors 1200V N-Chan Trench

floor Price/Ceiling Price

US $ 2.07~2.8 / Piece | Get Latest Price
Part Number:
FGA20N120FTDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.8
  • $2.35
  • $2.3
  • $2.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/19

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3PN-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V
Package / Case : TO-3PN-3


Parameters:

Technical/Catalog InformationFGA20N120FTDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Power - Max298W
Mounting TypeThrough Hole
Package / CaseTO-3PN
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGA20N120FTDTU
FGA20N120FTDTU



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