IGBT Transistors 1200V N-Chan Trench
FGA20N120FTDTU: IGBT Transistors 1200V N-Chan Trench
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 25 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3PN-3 | Packaging : | Tube |
Technical/Catalog Information | FGA20N120FTDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 40A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
Power - Max | 298W |
Mounting Type | Through Hole |
Package / Case | TO-3PN |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA20N120FTDTU FGA20N120FTDTU |