IGBT Transistors 1200V 20A SA FS
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A...
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 1.55 V |
Maximum Gate Emitter Voltage : | 25 V | Continuous Collector Current at 25 C : | 40 A |
Gate-Emitter Leakage Current : | 250 nA | Power Dissipation : | 348 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3 |
Packaging : | Tube |