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FGA15N120ANDTU, FGA15N120ANTD, FGA15N120ANTDTU_F109

Table of contents:
Info of FGA15N120ANDTU
Info of FGA15N120ANTD
Info of FGA15N120ANTDTU_F109

FGA15N120ANDTU, FGA15N120ANTD, FGA15N120ANTDTU_F109 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:09+

FGA15N120ANDTU, FGA15N120ANTD, FGA15N120ANTDTU_F109 Picture

FGA15N120ANDTU, FGA15N120ANTD, FGA15N120ANTDTU_F109 Datasheet download

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Part Number: FGA15N120ANDTU

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3P

D/C: 09+

Description: IGBT NPT 15A 1200V TO-3P

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FGA15N120ANDTU Parameters

Technical/Catalog Information	FGA15N120ANDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	24A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 15A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGA15N120ANDTU FGA15N120ANDTU

FGA15N120ANTD General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

FGA15N120ANTD Maximum Ratings

Symbol	Description		FGA15N120ANTD	Units
V_CES	Collector-Emitter Voltage		1200	V
V_GES	Gate-Emitter Voltage		± 20	V
I_C	Collector Current	@ T_C = 25°C	30	A
I_C	Collector Current	@ T_C = 100°C	15	A
I_CM	Pulsed Collector Current (Note 1)		45	A
I_F	Diode Continuous Forward Current	@ T_C = 100°C	15	A
I_FM	Diode Maximum Forward Current		45	A
P_D	Maximum Power Dissipation	@ T_C = 25°C	186	W
P_D	Maximum Power Dissipation	@ T_C = 100°C	74	W
T_J	Operating Junction Temperature		-55 to +150	°C
T_stg	Storage Temperature Range		-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds		300	°C

FGA15N120ANTD Features

• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V_CE(sat), typ = 1.9V @ I_C= 15A and T_C = 25°C
• Low switching loss: E_{off, typ} = 0.6mJ @ I_C= 15A and T_C = 25°C
• Extremely enhanced avalanche capability

FGA15N120ANTDTU_F109 Parameters

Technical/Catalog Information	FGA15N120ANTDTU_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 15A
Power - Max	186W
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGA15N120ANTDTU_F109 FGA15N120ANTDTU_F109

FGA15N120ANTDTU_F109 General Description

Using Fairchild's proprietary trench design and advanced NPTtechnology, the 1200V NPT IGBT offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation.

This device is well suited for the resonant or soft switching applicationsuch as induction heating, microwave oven, etc.

FGA15N120ANTDTU_F109 Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FGA15N120ANTDTU_F109	Full Production	RoHS Compliant	$2.66	TO-3PN	3	RAIL	N/A	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FGA15N120 Line 3: ANTD

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FGA15N120ANTDTU_F109 is available. Click here for more information .

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